Pb - Free Lead Plating RoHS Compliant Ost40n120hmf 10µ S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT

Model NO.
OST40N120HMF TO-247N
Model
Orientalsemi
Batch Number
2023
Brand
Orientalsemi
Transport Package
Carton
Specification
35.3x30x37.5/60x23x13
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month
Reference Price
$ 0.09 - 0.54
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Product Description

General Description
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBT TM ) technology to provide extremely low V CE (sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features
  • Advanced TGBT TM technology
  • Excellent conduction and switching loss
  • Excellent stability and uniformity
  • Fast and soft antiparallel diode

Applications
  • Induction converters
  • Uninterruptible power supplies


Key Performance Parameters

 
Parameter Value Unit
V CES, min @ 25°C 1200 V
Maximum junction temperature 175 °C
I C, pulse 160 A
V CE(sat), typ @ V GE =15V 1.45 V
Q g 214 nC

Marking Information

 
Product Name Package Marking
OST40N120HMF TO247 OST40N120HM

 
Absolute Maximum Ratings at T vj =25°C unless otherwise noted
 
Parameter Symbol Value Unit
Collector emitter voltage V CES 1200 V
Gate emitter voltage
V GES 		±20 V
Transient gate emitter voltage, T P ≤0.5µs, D<0.001 ±25 V
Continuous collector current 1) , T C =25 ºC
I C 		56 A
Continuous collector current 1) , T C =100 ºC 40 A
Pulsed collector current 2) , T C =25 ºC I C, pulse 160 A
Diode forward current 1) , T C =25 ºC
I F 		56 A
Diode forward current 1) , T C =100 ºC 40 A
Diode pulsed current 2) , T C =25 ºC I F, pulse 160 A
Power dissipation 3) , T C =25 ºC
P D 		357 W
Power dissipation 3) , T C =100 ºC 179 W
Operation and storage temperature T stg, T vj -55 to 175 °C
Short circuit withstand time V GE =15 V, V CC ≤600 V
Allowed number of short circuits<1000 Time between short circuits: ≥ 1.0 S
T vj =150 °C

t SC

10

μs

Thermal Characteristics
Parameter Symbol Value Unit
IGBT thermal resistance, junction- case R θJC 0.42 °C/W
Diode thermal resistance, junction- case R θJC 0.75 °C/W
Thermal resistance, junction- ambient 4) R θJA 40 °C/W
 

Electrical Characteristics at T vj =25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Collector-emitter breakdown voltage V (BR)CES 1200     V V GE =0 V, I C =0.5 mA


Collector-emitter saturation voltage


V CE(sat) 		  1.45 1.8 V V GE =15 V, I C =40 A T vj =25°C
  1.65   V V GE =15 V, I C =40 A, T vj =125°C
  1.8     V GE =15 V, I C =40 A, T vj =175°C
Gate- emitter
threshold voltage 		V GE(th) 4.8 5.8 6.8 V V CE =V GE , I D =0.5 mA


Diode forward voltage


V F 		  1.9 2.1 V V GE =0 V, I F =40 A T vj =25°C
  1.6     V GE =0 V, I F =40 A, T vj =125°C
  1.5     V GE =0 V, I F =40 A, T vj =175°C
Gate- emitter
leakage current 		I GES     100 nA V CE =0 V, V GE =20 V
Zero gate voltage collector current I CES     10 μA V CE =1200V, V GE =0 V
 

Dynamic Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance C ies   11270   pF
V GE =0 V, V CE =25 V,
ƒ=100 kHz
Output capacitance C oes   242   pF
Reverse transfer capacitance C res   10   pF
Turn-on delay time t d(on)   120   ns


V GE =15 V, V CC =600 V, R G =10 Ω, I C =40 A
Rise time t r   88   ns
Turn-off delay time t d(off)   246   ns
Fall time t f   160   ns
Turn-on energy E on   3.14   mJ
Turn-off energy E off   1.02   mJ
Turn-on delay time t d(on)   112   ns


V GE =15 V, V CC =600 V, R G =10 Ω, I C =20 A
Rise time t r   51   ns
Turn-off delay time t d(off)   284   ns
Fall time t f   148   ns
Turn-on energy E on   1.32   mJ
Turn-off energy E off   0.53   mJ

Gate Charge Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Q g   214   nC
V GE =15 V, V CC =960 V, I C =40 A
Gate-emitter charge Q ge   103   nC
Gate-collector charge Q gc   40   nC

Body Diode Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode reverse recovery time t rr   293   ns V R =600 V , I F =40 A,
di F /dt=500 A/μs T vj = 25°C
Diode reverse recovery charge Q rr   2.7   μC
Diode peak reverse recovery current I rrm   25   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a =25 °C.
 
Version 1: TO247-P package outline dimension


Ordering Information
 
Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box
TO247- P 30 11 330 6 1980

Product Information
 
Product Package Pb Free RoHS Halogen Free
OST40N120HMF TO247 yes yes yes


Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

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Pb - Free Lead Plating RoHS Compliant Ost40n120hmf 10&micro; S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
Pb - Free Lead Plating RoHS Compliant Ost40n120hmf 10&micro; S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT Pb - Free Lead Plating RoHS Compliant Ost40n120hmf 10&micro; S Short-Circuit Tolerance 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT

 

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